The constitutive equation for silicon and its use in crystal growth modeling
- Author
- TSAI, C. T; DILLON, O. W; DE ANGELIS, R. J
Univ. Kentucky, Lexington KY 40506-0046, United States - Conference name
- Winter annual meeting (Chicago IL 1988-11-27)
- Source
Journal of engineering materials and technology. 1990, Vol 112, Num 2, pp 183-187, 5 p ; ref : 21 ref
- CODEN
- JEMTA8
- ISSN
- 0094-4289
- Scientific domain
- Mechanical engineering; Mechanics acoustics
- Publisher
- American Society of Mechanical Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Contrainte résiduelle Croissance cristalline Densité dislocation Déformation plastique Equation constitutive Etude théorique Flambage Impureté Mouvement dislocation Oxygène Plasticité Relation contrainte déformation Semiconducteur Silicium Vitesse déformation
- Keyword (en)
- Residual stress Crystal growth Dislocation density Plastic deformation Constitutive equation Theoretical study Buckling Impurity Dislocation motion Oxygen Plasticity Stress strain relation Semiconductor materials Silicon Strain rate
- Keyword (es)
- Tensión residual Crecimiento cristalino Densidad dislocación Deformación plástica Ecuación constitutiva Estudio teórico Pandeo Impureza Movimiento dislocación Oxígeno Plasticidad Relación tensión deformación Semiconductor(material) Silicio Velocidad deformación
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20F Deformation and plasticity (including yield, ductility, and superplasticity)
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19348580
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1115/1.2903305 
https://dx.doi.org/10.1115/1.2903305
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