Dominant direct transitions in annealed GaAs/AlAs multiple quantum wells
- Author
- OH, Y. T1 ; KANG, T. W1 ; KIM, T. W2
[1] Department of Physics, Dongguk University, 3-26 Pil-dong, Chung-ku, Seoul 100-715, Korea, Republic of
[2] Department of Physics, Kwangwoon University, 447-1 Wolgye-dong, Nowon-ku, Seoul 139-701, Korea, Republic of - Source
Applied surface science. 1999, Vol 151, Num 1-2, pp 29-32 ; ref : 20 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Aluminium arséniure Composé binaire Couche interfaciale Etude expérimentale Gallium arséniure Matériau semiconducteur Photoluminescence Photoréflectance Puits quantique multiple Recuit thermique rapide Transition niveau énergie Al As AlAs As Ga GaAs Composé minéral
- Keyword (en)
- Aluminium arsenides Binary compounds Interfacial layer Experimental study Gallium arsenides Semiconductor materials Photoluminescence Photoreflectance Multiple quantum well Rapid thermal annealing Energy-level transitions Inorganic compounds
- Keyword (es)
- Capa interfacial Pozo cuántico múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35F Diffusion; interface formation
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H66 Optical properties of specific thin films / 001B70H66F Iii-v semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1937417
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0169-4332(99)00252-4 
https://dx.doi.org/10.1016/S0169-4332(99)00252-4
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