MBE growth and quantum transport measurements of spike-doped InSb and InAs
- Author
- WILLIAMS, R. L; SKURAS, E; STRADLING, R. A; DROOPAD, R; HOLMES, S. N; PARKER, S. D
Imperial coll. sci. technology medicine, Blackett lab., dep. physics, London SW7 2BZ, United Kingdom - Conference name
- International conference on narrow-gap semiconductors and related materials (Gaithersburg MD 1989-06-12)
- Source
Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S338-S341 ; ref : 10 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19381029
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/5/3S/076 
https://dx.doi.org/10.1088/0268-1242/5/3S/076
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