Molecular simulation on the material/interfacial strength of the low-dielectric materials
- Author
- YUAN, Cadmus A1 ; VAN DER SLUIS, Olaf1 2 ; ZHANG, G. Q1 3 ; ERNST, Leo J1 ; VAN DRIEL, Willem D3 ; VAN SILFHOUT, Richard B. R2
[1] Department of Precision and Microsystem Engineering, Delft University of Technology, Room 8b-3-12, Mekelweg 2, 2628 CD Delf, Netherlands
[2] Philips Applied Technologies, HTC 7, Netherlands
[3] NXP Semiconductors, Netherlands - Conference title
- 18th European symposium on reliability of electron devices, failure physics and analysis
- Conference name
- ESREF 2007 European symposium on reliability of electron devices, failure physics and analysis (18 ; Arcachon 2007-10-12)
- Author (monograph)
- LABAT, Nathalie (Editor)1 ; TOUBOUL, André (Editor)1
Université de Bordeaux 1, Laboratoire de l'intégration du matériau au système (IMS), 33405 Talence, France (Organiser of meeting)
Association pour le Développement de l'enseignement et des recherches auprès des universités, des centres de recherche et des entreprises d'Aquitaine (ADERA), 33608 Pessac, France (Organiser of meeting)
Ecole nationale supérieure d'électronique, informatique et radiocommunications de Bordeaux (ENSEIRB), 33402 Talence, France (Organiser of meeting)
[1] IMS, University of Bordeaux, France - Source
Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1483-1491, 9 p ; ref : 21 ref
- CODEN
- MCRLAS
- ISSN
- 0026-2714
- Scientific domain
- Electronics
- Publisher
- Elsevier, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Algorithme Composition chimique Diélectrique basse permittivité Délaminage Fiabilité Fissure Force adhérence Interface solide solide Liaison chimique Matériau amorphe Matériau poreux Modélisation Méthode dynamique moléculaire Résistance matériau Résistance mécanique
- Keyword (en)
- Algorithm Chemical composition Low k dielectric Delamination Reliability Crack Adhesive strength Solid solid interface Chemical bond Amorphous material Porous material Modeling Molecular dynamics method Strength of materials Strength
- Keyword (es)
- Algoritmo Composición química Dieléctrico baja constante dieléctrica Delaminación Fiabilidad Fisura Fuerza adherencia Interfase sólido sólido Enlace químico Material amorfo Material poroso Modelización Método dinámico molecular Resistencia material Resistencia mecánica
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03B Testing, measurement, noise and reliability
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19438684
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.microrel.2007.07.052 
https://dx.doi.org/10.1016/j.microrel.2007.07.052
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2007.07.052\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:4:\"9-11\";s:8:\"\u0000*\u0000spage\";s:4:\"1483\";s:8:\"\u0000*\u0000epage\";s:4:\"1491\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"YUAN\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Cadmus A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:19:\"VAN DER SLUIS, Olaf\";i:1;s:11:\"ZHANG, G. Q\";i:2;s:12:\"ERNST, Leo J\";i:3;s:19:\"VAN DRIEL, Willem D\";i:4;s:26:\"VAN SILFHOUT, Richard B. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:88:\"18th European symposium on reliability of electron devices, failure physics and analysis\";s:8:\"\u0000*\u0000title\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"9\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2007.07.052\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:4:\"9-11\";s:8:\"\u0000*\u0000spage\";s:4:\"1483\";s:8:\"\u0000*\u0000epage\";s:4:\"1491\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"YUAN\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Cadmus A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:19:\"VAN DER SLUIS, Olaf\";i:1;s:11:\"ZHANG, G. Q\";i:2;s:12:\"ERNST, Leo J\";i:3;s:19:\"VAN DRIEL, Willem D\";i:4;s:26:\"VAN SILFHOUT, Richard B. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:88:\"18th European symposium on reliability of electron devices, failure physics and analysis\";s:8:\"\u0000*\u0000title\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"9\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"UnpaywallOpenUrl\":35:{s:8:\"\u0000*\u0000email\";s:27:\"assistance-portail@inist.fr\";s:6:\"\u0000*\u0000fmt\";N;s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2007.07.052\";s:6:\"\u0000*\u0000pii\";N;s:7:\"\u0000*\u0000pmid\";N;s:9:\"\u0000*\u0000atitle\";N;s:9:\"\u0000*\u0000jtitle\";N;s:9:\"\u0000*\u0000stitle\";N;s:7:\"\u0000*\u0000date\";N;s:9:\"\u0000*\u0000volume\";N;s:8:\"\u0000*\u0000issue\";N;s:8:\"\u0000*\u0000spage\";N;s:8:\"\u0000*\u0000epage\";N;s:8:\"\u0000*\u0000pages\";N;s:7:\"\u0000*\u0000issn\";N;s:8:\"\u0000*\u0000eissn\";N;s:9:\"\u0000*\u0000aulast\";N;s:10:\"\u0000*\u0000aufirst\";N;s:9:\"\u0000*\u0000auinit\";N;s:10:\"\u0000*\u0000auinitm\";N;s:5:\"\u0000*\u0000au\";N;s:9:\"\u0000*\u0000aucorp\";N;s:7:\"\u0000*\u0000isbn\";N;s:8:\"\u0000*\u0000coden\";N;s:8:\"\u0000*\u0000genre\";N;s:7:\"\u0000*\u0000part\";N;s:9:\"\u0000*\u0000btitle\";N;s:8:\"\u0000*\u0000title\";N;s:8:\"\u0000*\u0000place\";N;s:6:\"\u0000*\u0000pub\";N;s:10:\"\u0000*\u0000edition\";N;s:9:\"\u0000*\u0000tpages\";N;s:9:\"\u0000*\u0000series\";N;s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";N;}"
Unpaywall access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2007.07.052\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:4:\"9-11\";s:8:\"\u0000*\u0000spage\";s:4:\"1483\";s:8:\"\u0000*\u0000epage\";s:4:\"1491\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"YUAN\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Cadmus A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:19:\"VAN DER SLUIS, Olaf\";i:1;s:11:\"ZHANG, G. Q\";i:2;s:12:\"ERNST, Leo J\";i:3;s:19:\"VAN DRIEL, Willem D\";i:4;s:26:\"VAN SILFHOUT, Richard B. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:88:\"18th European symposium on reliability of electron devices, failure physics and analysis\";s:8:\"\u0000*\u0000title\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"9\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2007.07.052\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:4:\"9-11\";s:8:\"\u0000*\u0000spage\";s:4:\"1483\";s:8:\"\u0000*\u0000epage\";s:4:\"1491\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"YUAN\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Cadmus A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:19:\"VAN DER SLUIS, Olaf\";i:1;s:11:\"ZHANG, G. Q\";i:2;s:12:\"ERNST, Leo J\";i:3;s:19:\"VAN DRIEL, Willem D\";i:4;s:26:\"VAN SILFHOUT, Richard B. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:88:\"18th European symposium on reliability of electron devices, failure physics and analysis\";s:8:\"\u0000*\u0000title\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"9\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:10:\"proceeding\";s:6:\"\u0000*\u0000doi\";s:30:\"10.1016\/j.microrel.2007.07.052\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:9:\"\u0000*\u0000jtitle\";s:32:\"Microelectronics and reliability\";s:9:\"\u0000*\u0000stitle\";s:21:\"Microelectron. reliab\";s:7:\"\u0000*\u0000date\";s:4:\"2007\";s:9:\"\u0000*\u0000volume\";s:2:\"47\";s:8:\"\u0000*\u0000issue\";s:4:\"9-11\";s:8:\"\u0000*\u0000spage\";s:4:\"1483\";s:8:\"\u0000*\u0000epage\";s:4:\"1491\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0026-2714\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:4:\"YUAN\";s:10:\"\u0000*\u0000aufirst\";s:8:\"Cadmus A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:5:{i:0;s:19:\"VAN DER SLUIS, Olaf\";i:1;s:11:\"ZHANG, G. Q\";i:2;s:12:\"ERNST, Leo J\";i:3;s:19:\"VAN DRIEL, Willem D\";i:4;s:26:\"VAN SILFHOUT, Richard B. R\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"MCRLAS\";s:8:\"\u0000*\u0000genre\";s:10:\"proceeding\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:88:\"18th European symposium on reliability of electron devices, failure physics and analysis\";s:8:\"\u0000*\u0000title\";s:89:\"Molecular simulation on the material\/interfacial strength of the low-dielectric materials\";s:8:\"\u0000*\u0000place\";s:6:\"Oxford\";s:6:\"\u0000*\u0000pub\";s:8:\"Elsevier\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"9\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
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