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The active loads based on capacitively coupled HTSC-single hole transistor

Author
SHEN, B1 ; JIANG, J. F1 ; CAI, Q. Y1
[1] Microelectronic Research Center, Shanghai Jiao Tong University, Shanghai, 200030, China
Conference title
The 1998 Applied Superconductivity Conference. Part III
Conference name
The 1998 Applied Superconductivity Conference (ASC-98) (ASC-98) (Palm Desert, CA 1998-09-13)
Author (monograph)
Lawrence Berkeley National Laboratory, Berkeley CA, United States (Funder/Sponsor)
US Department of Energy ; Division of High Energy Physics, Washington DC, United States (Funder/Sponsor)
US Department of Energy ; Superconductivity Program for Electric Power, Washington DC, United States (Funder/Sponsor)
Mirassou Vineyards, United States (Funder/Sponsor)
Educational Institute for Superconductivity IISSC, United States (Funder/Sponsor)
Intermagnetics General Corporation, Latham NY, United States (Funder/Sponsor)
IEEE ; Committee on Applied Superconductivity, United States (Funder/Sponsor)
Source

IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 4273-4276 ; 3 ; ref : 4 ref

ISSN
1051-8223
Scientific domain
Electronics; Electrical engineering
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Conference Paper
Language
English
Keyword (fr)
Caractéristique courant tension Circuit analogique Effet tunnel Schéma équivalent Supraconducteur haute température Symbole Tension polarisation Charge active Courant drain Transistor 1 trou
Keyword (en)
Voltage current curve Analog circuit Tunnel effect Equivalent circuit High temperature superconductor Symbol Bias voltage Drain current Single hole transistor
Keyword (es)
Característica corriente tensión Circuito analógico Efecto túnel Esquema equivalente Supraconductor alta temperatura Símbolo Voltage polarización
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1945792

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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