Interaction induced by nonuniform self-fields in stacks of two long Josephson junctions
- Author
- CARAPELLA, G1 ; COSTABILE, G1 ; PEDERSEN, N. F2 ; SAKAI, S3
[1] INFM Research Unit and Department of Physics, University of Salerno, 84081 Baronissi, Italy
[2] Department of Physics, B309, The Technical University of Denmark, 2800 Lyngby, Denmark
[3] Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba-shi, Ibaraki 305, Japan - Conference title
- The 1998 Applied Superconductivity Conference. Part III
- Conference name
- The 1998 Applied Superconductivity Conference (ASC-98) (ASC-98) (Palm Desert, CA 1998-09-13)
- Author (monograph)
- Lawrence Berkeley National Laboratory, Berkeley CA, United States (Funder/Sponsor)
US Department of Energy ; Division of High Energy Physics, Washington DC, United States (Funder/Sponsor)
US Department of Energy ; Superconductivity Program for Electric Power, Washington DC, United States (Funder/Sponsor)
Mirassou Vineyards, United States (Funder/Sponsor)
Educational Institute for Superconductivity IISSC, United States (Funder/Sponsor)
Intermagnetics General Corporation, Latham NY, United States (Funder/Sponsor)
IEEE ; Committee on Applied Superconductivity, United States (Funder/Sponsor) - Source
IEEE transactions on applied superconductivity. 1999, Vol 9, Num 2, pp 3953-3956 ; 3 ; ref : 10 ref
- ISSN
- 1051-8223
- Scientific domain
- Electronics; Electrical engineering
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Champ magnétique Conception circuit Courant critique Essai Jonction Josephson Limite stabilité Profondeur pénétration Résultat expérimental Etat tension nulle Pénétration London
- Keyword (en)
- Magnetic field Circuit design Critical current Test Josephson junction Stability boundary Penetration depth Experimental result Zero voltage state
- Keyword (es)
- Campo magnético Concepción circuito Corriente crítica Ensayo Unión Josephson Límite estabilidad Profundidad penetración Resultado experimental
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F11 Superconducting devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1945885
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/77.783893 
https://dx.doi.org/10.1109/77.783893
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