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MOCVD-grown InAsSb strained-layer superlattice infrared detectors with photoresponses ≥ 10μm

Author
KURTZ, S. R; BIELEFELD, R. M; ZIPPERIAN, T. E
Sandia National Laboratories, Albuquerque NM 87185, United States
Conference name
International conference on narrow-gap semiconductors and related materials (Gaithersburg MD 1989-06-12)
Source

Semiconductor science and technology. 1990, Vol 5, Num 3S, pp S24-S26 ; ref : 11 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy

Discipline
Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19480123

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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