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High-performance 980-nm quantum-well lasers using a hybrid material system of an Al-free InGaAs-InGaAsP active region and AlGaAs cladding layers grown by metal-organic chemical vapor deposition

Author
YANG, G. W1 ; HWU, R. J1 ; XU, Z. T2 ; MA, X. Y2
[1] Department of Electrical Engineering, University of Utah, Salt Lake City, UT 84112, United States
[2] Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Source

IEEE journal of quantum electronics. 1999, Vol 35, Num 10, pp 1535-1541 ; ref : 21 ref

CODEN
IEJQA7
ISSN
0018-9197
Scientific domain
Electronics; Optics; Telecommunications
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Aluminium arséniure Composé quaternaire Composé ternaire Courant seuil Croissance cristalline Etude expérimentale Gallium arséniure Gallium phosphure Guide onde évidement Indium arséniure Indium phosphure Laser IR Laser guide onde Laser puits quantique Laser semiconducteur Matériau laser Méthode MOCVD Puissance sortie Puits quantique contraint Al As Ga AlGaAs As Ga In P Ga In P InGaAsP InGaP
Keyword (en)
Aluminium arsenides Quaternary compounds Ternary compounds Threshold current Crystal growth Experimental study Gallium arsenides Gallium phosphides Ridge waveguides Indium arsenides Indium phosphides Infrared laser Waveguide lasers Quantum well lasers Semiconductor lasers Laser materials MOCVD Output power Strained quantum well
Keyword (es)
Laser IR Potencia salida Pozo cuántico forzado
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes

Pacs
4255P Semiconductor lasers; laser diodes

Discipline
Physics : optics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1948674

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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