Micromechanical fracture strength of silicon
- Author
- ERICSON, F; SCHWEITZ, J.-A
Uppsala univ. , dep. technology , materials sci. div., Uppsala 751 21, Sweden - Source
Journal of applied physics. 1990, Vol 68, Num 11, pp 5840-5844, 5 p ; ref : 19 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Etude expérimentale Etude théorique Loi Weibull Module élasticité Rupture Semiconducteur Silicium Traitement surface
- Keyword (en)
- Experimental study Theoretical study Weibull distribution Modulus of elasticity Fracture(mechanics) Semiconductor materials Silicon Surface treatment
- Keyword (es)
- Estudio experimental Estudio teórico Ley Weibull Módulo elasticidad Ruptura Semiconductor(material) Silicio Tratamiento superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60B Mechanical and acoustical properties of condensed matter / 001B60B20 Mechanical properties of solids / 001B60B20M Fatigue, brittleness, fracture, and cracks
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19506549
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.346957 
https://dx.doi.org/10.1063/1.346957
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