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Dynamics of electric field screening in semi-insulating ZnSe

Author
ASTRATOV, V. N; FURMAN, A. S; ILINSKII, A. V; REPIN, S. M
A. F. Ioffe physico-tech. inst., Leningrad 194021, Ussr
Source

Physica status solidi. B. Basic research. 1991, Vol 163, Num 1, pp 135-138, 4 p ; ref : 5 ref

CODEN
PSSBBD
ISSN
0370-1972
Scientific domain
Crystallography; Electronics; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Wiley, Berlin
Publication country
Germany
Document type
Article
Language
English
Keyword (fr)
Basse température Charge espace Composé minéral Etude expérimentale Haute température Mobilité dérive Mobilité porteur charge Niveau profond Piégeage porteur charge Semiconducteur Température Trou Zinc Séléniure
Keyword (en)
Low temperature Space charge Inorganic compound Experimental study High temperature Drift mobility Charge carrier mobility Deep level Charge carrier trapping Semiconductor materials Temperature Hole Zinc Selenides
Keyword (es)
Baja temperatura Carga espacio Compuesto inorgánico Estudio experimental Alta temperatura Movilidad deriva Movilidad portador carga Nivel profundo Captura portador carga Semiconductor(material) Temperatura Hoyo Zinc
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20J Charge carriers: generation, recombination, lifetime, and trapping

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19531981

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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