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Laser CVD of a-Si:H from SiH4 and Si2H6 : relations between chemistry, growth rate and film properties

Author
HESCH, K; HESS, P; OETZMANN, H; SCHMIDT, C
Univ. Heidelberg, inst. physical chemistry, Heidelberg 6900, Germany
Conference name
1990 E-MRS [European Materials Research Society]. Spring conference (Strasbourg 1990-05-29)
Source

Applied surface science. 1990, Vol 46, Num 1-4, pp 233-238, 6 p ; ref : 9 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19548483

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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