Atomic structure of amorphous Si1-xCx films prepared by r.f. sputtering
- Author
- SUZAKI, Y; INOUE, S; HASEGAWA, I; YOSHII, K; KAWABE, H
Osaka univ., fac. eng., dep. precision eng., Osaka, Japan - Source
Thin solid films. 1989, Vol 173, Num 2, pp 235-242, 8 p ; ref : 22 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Keyword (fr)
- Composition chimique Magnétron Pulvérisation haute fréquence Silicium Carbure Solution solide Structure état amorphe
- Keyword (en)
- Chemical composition Magnetron Radiofrequency sputtering Silicon Carbides Solid solution Amorphous state structure
- Keyword (es)
- Composición química Magnetrón Pulverización alta frecuencia Silicio Solución sólida Estructura estado amorfo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60A Structure of solids and liquids; crystallography / 001B60A43 Disordered solids
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19582414
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0040-6090(89)90139-9 
https://dx.doi.org/10.1016/0040-6090(89)90139-9
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