Causes of the degradation of the electroluminescence of red AlGaAs-GaAs heterostructures
- Author
- TORCHINSKAYA, T. V; ABDULLAEV, ZH. S
Akad. Nauk. USSR, inst. poluprovodnikov, Kiev, Ukraine - Source
Žurnal tehničeskoj fiziki. = Journal of technical physics. 1989, Vol 59, Num 7, pp 175-178, 4 p ; ref : 10 ref
- Publisher
- RAN, Sankt-Peterburg
- Publication country
- Russian Federation
- Document type
- Article
- Language
- Russian
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19658630
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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