The effect of heat treatment on the formation of defects that lower the breakdown voltage of high-voltage semiconductor devices
- Author
- MASLENNIKOV, N. M; SIDOROV, YU. I; FROLOVA, T. P; TURIKOVA, L. V
Vsesoyuznyj ehlektrotekh. inst. V.I. Lenina, Moskva, Ussr - Source
Žurnal tehničeskoj fiziki. = Journal of technical physics. 1989, Vol 59, Num 9, pp 156-158, 3 p ; ref : 9 ref
- Publisher
- RAN, Sankt-Peterburg
- Publication country
- Russian Federation
- Document type
- Article
- Language
- Russian
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies
- Discipline
- Electrical engineering. Electroenergetics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19658644
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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