Characteristics of GaAs-AlGaAs (SCH) lasers grown by low-temperature LPE technique
- Author
- DIAZ, P; PRUTSKIJ, T. A; SANCHEZ, M; LARIONOV, V. R; KHVOSTIKOV, V. P
Havana univ., fac. physics, solid state electronic res. dep., La Habana, Cuba - Source
Crystal research and technology (1979). 1989, Vol 24, Num 9, pp 921-928, 8 p ; ref : 10 ref
- CODEN
- CRTEDF
- ISSN
- 0232-1300
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Wiley-VCH, Berlin
- Publication country
- Germany
- Document type
- Article
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B40 Fundamental areas of phenomenology (including applications) / 001B40B Optics / 001B40B55 Lasers / 001B40B55P Semiconductor lasers; laser diodes
- Discipline
- Physics : optics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19673775
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1002/crat.2170240914 
https://dx.doi.org/10.1002/crat.2170240914
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