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Low-pressure chemical vapour deposition of silicon and germanium on silicon using contamination-minimized processing

Author
MIKOSHIBA, N; MUROTA, J; KOHLHASE, A
Tohoku univ., res. inst. electrical communication, Sendai 980, Japan
Conference name
ICSS [International conference on solid surfaces]. 7 (Cologne 1989-09-25)
Source

Vacuum. 1990, Vol 41, Num 4-6, pp 1087-1090, 4 p ; ref : 13 ref

CODEN
VACUAV
ISSN
0042-207X
Scientific domain
Metallurgy, welding; Physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35J Surface and interface dynamics and vibrations

Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19704453

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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