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Lanthanum silicide formation in thin La-Si multilayer films

Author
HSU, C. C; HO, J; QIAN, J. J; WANG, Y. T; WANG, Y. X
Acad. sinica , inst. semiconductors, Peking 100080, China
Conference name
ICSS [International conference on solid surfaces]. 7 (Cologne 1989-09-25)
Source

Vacuum. 1990, Vol 41, Num 4-6, pp 1425-1427, 3 p ; ref : 3 ref

CODEN
VACUAV
ISSN
0042-207X
Scientific domain
Metallurgy, welding; Physics
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Conference Paper
Language
English
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19704650

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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