Low energy ion-beam post hydrogenation of phosphor implanted amorphous silicon films
- Author
- GALLONI, R; RUTH, M; DESALVO, A; TSUO, Y. S
CNR, 1st LAMEL, Bologna 40126, Italy - Conference title
- Hydrogen in semiconductors : bulk and surface properties, Trieste, Italy, 27-31, August 1990
- Conference name
- IUAP-ICTP [International Union of Pure and Applied Physics - International Centre for Theoretical Physics]. Semiconductor symposium. 06 (Trieste 1990-08-27)
- Author (monograph)
- STUTZMANN, Martin (Editor)1 ; CHEVALLIER, Jacques (Editor)2
International Union of Pure and Applied Physics, Göteborg, Sweden (Funder/Sponsor)
International Centre for Theoretical Physics, Trieste, Italy (Funder/Sponsor)
[1] Max-Planck-Inst., Festkörperforschung, Stuttgart 7000, Germany
[2] CNRS, lab. physique solides Bellevue, Meudon 92195, France - Source
Physica. B, Condensed matter. 1991, Vol 170, Num 1-4, pp 273-276, 4 p ; ref : 8 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B20 Conductivity phenomena in semiconductors and insulators / 001B70B20M Galvanomagnetic and other magnetotransport effects
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19704836
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0921-4526(91)90137-4 
https://dx.doi.org/10.1016/0921-4526(91)90137-4
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