Silicon on insulator material by wafer bonding
- Author
- HARENDT, C; HUNT, C. E; APPEL, W; GRAF, H.-G; HOÊFFLINGER, B; PENTEKER, E
Inst. microelectronics, Stuttgart 7000, Germany - Source
Journal of electronic materials. 1991, Vol 20, Num 3, pp 267-277, 11 p ; ref : 17 ref
- CODEN
- JECMA5
- ISSN
- 0361-5235
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Circuit intégré Etude expérimentale Fabrication microélectronique Gravure sélective Pastille (électronique) Semiconducteur Technologie silicium sur isolant Traitement surface
- Keyword (en)
- Integrated circuit Experimental study Microelectronic fabrication Selective etching Wafer Semiconductor materials Silicon on insulator technology Surface treatment
- Keyword (es)
- Circuito integrado Estudio experimental Fabricación microeléctrica Grabado selectivo Pastilla(electrónica) Semiconductor(material) Tecnología silicio sobre aislante Tratamiento superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19757218
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/BF02651903 
https://dx.doi.org/10.1007/BF02651903
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