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Limitations of interface sharpness in a-Si:H/a-SiC:H multilayers

Author
SCHWARZ, R; FISCHER, T; HANESCH, P; MUSCHIK, T; KOLODZEY, J; CERVA, H; MEYERHEIM, H. L; SCHERZER, B. M. U
Tech. Univ. München, Physik-Dep. E16, Garching 8046, Germany
Conference name
Symposium D on analytical techniques for the characterization of compound semiconductors (Strasbourg 1990-11-27)
Source

Applied surface science. 1991, Vol 50, Num 1-4, pp 456-461, 6 p ; ref : 14 ref

ISSN
0169-4332
Scientific domain
General chemistry, physical chemistry; Crystallography; Nanotechnologies, nanostructures, nanoobjects; Condensed state physics
Publisher
Elsevier Science, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties

Discipline
Physics of condensed state : structure, mechanical and thermal properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19768682

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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