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Etude du HEMT à canal composite GaInAs/InP pour modulation optique à haut débit

Other title
Study of InGaAs/InP composite channel HEMTs for high bit-rate optical modulation circuits (en)
Author
Ladner Marcoux, Carine; Crozat, Paul (Advisor (for a thesis or dissertation))
Université de Paris 11, Orsay, France (Degree-grantor)
Source

Etude du HEMT à canal composite GaInAs/InP pour modulation optique à haut débit. 1999, 203 p., ref : 122 ref

Thesis number
99 PA11 2237
Document type
Thesis (New Ph.D. thesis)
Language
French
Keyword (fr)
Canal transistor Fiabilité Fréquence coupure Ionisation choc Optoélectronique Passivation Semiconducteur III-V Tension disruptive Transistor mobilité électron élevée Transmission optique
Keyword (en)
Transistor channel Reliability Cut off frequency Impact ionization Optoelectronics Passivation III-V semiconductors Disruptive voltage High electron mobility transistor Optical transmission
Keyword (es)
Canal transistor Fiabilidad Frecuencia corte Ionización choque Optoelectrónica Pasivación Voltaje disruptivo Transistor movibilidad elevada electrones Transmisión óptica
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03G Electric, optical and optoelectronic circuits / 001D03G02 Circuit properties / 001D03G02C Optical and optoelectronic circuits / 001D03G02C1 Integrated optics. Optical fibers and wave guides

Pacs
4282B Design and performance testing of integrated-optical systems

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
197688

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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