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Distribution of a centers in the base regions of semiconductor power components in electron bombardment

Author
GEIFMAN, E. M; SEREZHKIN, Yu. N; CHIBIRKIN, V. V
Issue title
Power electronics
Author (monograph)
FLORENTZEV, S. N (Editor)
Source

Russian electrical engineering. = Elektrotekhnika. 1997, Vol 68, Num 11, pp 26-29 ; ref : 7 ref

CODEN
RELEEG
ISSN
1068-3712
Scientific domain
Electrical engineering
Publisher
Allerton, New York, NY
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Centre recombinaison Charge espace Diode puissance Dispositif puissance Dispositif semiconducteur Distribution concentration Electronique puissance Estimation paramètre Irradiation électron Jonction diffusion Jonction p n
Keyword (en)
Recombination center Space charge Power diode Power device Semiconductor device Concentration distribution Power electronics Parameter estimation Electron irradiation Diffusion junction p n junction
Keyword (es)
Centro recombinación Carga espacio Diodo potencia Dispositivo potencia Dispositivo semiconductor Distribución concentración Electrónica potencia Estimación parámetro Irradiación electrón Unión difusión Unión p n
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies

Discipline
Electrical engineering. Electroenergetics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
1976982

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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