Long-term stability of InP MIS devices
- Author
- TARDY, J; THOMAS, I; VIKTOROVITCH, P; GENDRY, M; PERROSSIER, J. L; SANTINELLI, C; BESLAND, M. P; LOUIS, P; POST, G
CNRS, URA n°848 lab. electronique, Ecully 69131, France - Conference name
- Symposium D on analytical techniques for the characterization of compound semiconductors (Strasbourg 1990-11-27)
- Source
Applied surface science. 1991, Vol 50, Num 1-4, pp 383-389, 7 p ; ref : 14 ref
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C20 Surface and interface electron states
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19771233
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0169-4332(91)90203-V 
https://dx.doi.org/10.1016/0169-4332(91)90203-V
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