Assessment of interface state density in silicon metal-oxide-semiconductor transistors at room, liquid-nitrogen, and liquid-helium temperatures
- Author
- HAFEZ, I. M; GHIBAUDO, G; BALESTRA, F
Lab. physique composants semiconducteurs, ENSERG, Grenoble 38016, France - Source
Journal of applied physics. 1990, Vol 67, Num 4, pp 1950-1952, 3 p ; ref : 10 ref
- CODEN
- JAPIAU
- ISSN
- 0021-8979
- Scientific domain
- Crystallography; Electronics; Optics; Condensed state physics; Physics
- Publisher
- American Institute of Physics, Woodbury, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Azote liquide Densité état Etat électronique interface Hélium liquide Silicium Température cryogénique Transistor MOS Transistor effet champ
- Keyword (en)
- Liquid nitrogen Density of states Interface electron state Liquid helium Silicon Cryogenic temperature MOS transistor Field effect transistor
- Keyword (es)
- Nitrógeno líquido Densidad estado Estado electrónico interfase Helio líquido Silicio Temperatura criogénica Transistor MOS Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19774770
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1063/1.345572 
https://dx.doi.org/10.1063/1.345572
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