Metal-organic molecular beam epitaxy of GaAs and Ga0.5In0.5P
- Author
- MAUREL, P; BOVE, P; GARCIA, J. C; GRATTEPAIN, C
Thomson CSF, lab. cent. rech., Orsay 91401, France - Source
Semiconductor science and technology. 1991, Vol 6, Num 4, pp 254-260, 7 p ; ref : 25 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Cinétique Condensation faisceau moléculaire Couche mince Croissance cristalline Epitaxie Etude expérimentale Gallium Arséniure Gallium Indium Phosphure Hétérojonction Impureté Puits quantique Semiconducteur Température
- Keyword (en)
- Kinetics Molecular beam condensation Thin film Crystal growth Epitaxy Experimental study Gallium Arsenides Gallium Indium Phosphides Heterojunction Impurity Quantum well Semiconductor materials Temperature
- Keyword (es)
- Cinética Condensación haz molecular Capa fina Crecimiento cristalino Epitaxia Estudio experimental Galio Galio Heterounión Impureza Pozo cuántico Semiconductor(material) Temperatura
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H65 Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19823172
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/6/4/005 
https://dx.doi.org/10.1088/0268-1242/6/4/005
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