Electron-energy-loss characterization of the H-terminated Si(111) and Si(100) surfaces obtained by etching in NH4F
- Author
- DUMAS, P; CHABAL, Y. J
CNRS, LASIR, Thiais 94320, France - Source
Chemical physics letters. 1991, Vol 181, Num 6, pp 537-543, 7 p ; ref : 37 ref
- CODEN
- CHPLBC
- ISSN
- 0009-2614
- Scientific domain
- General chemistry, physical chemistry; Atomic molecular physics; Condensed state physics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Keyword (fr)
- Attaque chimique Caractérisation Couche mince Etude expérimentale Impureté Mode vibration Résonance Fermi Semiconducteur Silicium Spectre perte énergie électron Surface Traitement surface
- Keyword (en)
- Chemical etching Characterization Thin film Experimental study Impurity Vibrational mode Fermi resonance Semiconductor materials Silicon Electron energy loss spectrum Surface Surface treatment
- Keyword (es)
- Ataque químico Caracterización Capa fina Estudio experimental Impureza Modo de vibración Resonancia Fermi Semiconductor(material) Silicio Espectro pérdida energía electrón Superficie Tratamiento superficie
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H35 Solid surfaces and solid-solid interfaces / 001B60H35B Surface structure and topography
- Discipline
- Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19853977
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0009-2614(91)80309-L 
https://dx.doi.org/10.1016/0009-2614(91)80309-L
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