Low temperature electrical mapping of ion implanted fet layers : sidegating effect and transport properties
- Author
- ROIZES, A; DAVID, J. P
Cent. études rech. Toulouse, office national études rech. aérospatiales, Toulouse 31055, France - Conference title
- Defect recognition and image processing in III-V compounds III, Tokyo, Japan, 22-25 September 1989
- Conference name
- International symposium on defect recognition and image processing in III-V compounds III [Drip III]. 03 (Tokyo 1989-09-22)
- Author (monograph)
- OGAWA, TOMOYA (Editor)
Japan Society of Applied physics, Tokyo, Japan (Funder/Sponsor)
Crystallographic Society of Japan, Japan (Funder/Sponsor)
Japan Society for the Promotion of Science, Tokyo, Japan (Funder/Sponsor)
Gakushuim univ. , dep. physics, Tokyo 171, Japan - Source
Journal of crystal growth. 1990, Vol 103, Num 1-4, pp 291-296, 6 p ; ref : 4 ref
- CODEN
- JCRGAE
- ISSN
- 0022-0248
- Scientific domain
- Crystallography; Geology; Metallurgy, welding
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C40 Electronic transport in interface structures
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19856823
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/0022-0248(90)90202-V 
https://dx.doi.org/10.1016/0022-0248(90)90202-V
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