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Quantum-Dot Infrared Photodetectors : By optimizing dot growth processes, materials have been produced that demonstrate potential, with further development, for high-performance infrared sensing

Author
CAMPBELL, Joe C1 ; MADHUKAR, Anupam2
[1] Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA 22904-4743, United States
[2] Nanostructure Materials and Devices Laboratory, Departments of Materials Science and Physics, University of Southern California, Los Angeles, CA 90089-0241, United States
Issue title
Optoelectronic devices based on quantum dots
Author (monograph)
BHATTACHARYA, Pallab (Editor)1 ; BIMBERG, Dieter (Editor)2 ; ARAKAWA, Yasuhiko (Editor)3
[1] Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109-2122, United States
[2] Institut für Festkörperphysik Technische Universität Berlin, 10623 Berlin, Germany
[3] University of Tokyo, Tokyo, Japan
Source

Proceedings of the IEEE. 2007, Vol 95, Num 9, pp 1815-1827, 13 p ; ref : 46 ref

CODEN
IEEPAD
ISSN
0018-9219
Scientific domain
Electronics; Computer science; Telecommunications
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
AlGaAs GaAs InGaAs infrared photodetector quantum dot quantum-dot infrared photodetector (QDIP)
Keyword (fr)
Arséniure d'aluminium Dispositif optoélectronique Détecteur IR Détecteur rayonnement Evaluation performance Haute performance Incidence normale Matériau dopé Mécanisme croissance Photodétecteur Point quantique Revêtement Région active 0707D 0757K 8560G AlGaAs Dispositif point quantique GaAs InAs InGaAs
Keyword (en)
Aluminium arsenides Optoelectronic device Infrared detector Radiation detector Performance evaluation High performance Normal incidence Doped materials Growth mechanism Photodetector Quantum dot Coatings Active region Quantum dot devices
Keyword (es)
Dispositivo optoelectrónico Detector rayos infrarrojos Detector rayo Evaluación prestación Alto rendimiento Incidencia normal Mecanismo crecimiento Fotodetector Punto cuántico Revestimiento Región activa
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G07 General equipment and techniques / 001B00G07D Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Pascal
001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G57 Infrared, submillimeter wave, microwave and radiowave instruments, equipment and techniques / 001B00G57K Bolometer; infrared, submillimeter wave, microwave and radiowave receivers and detectors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices

Discipline
Electronics Metrology
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19869816

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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