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Gate Injection Transistor (GIT) : A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation

Author
UEMOTO, Yasuhiro1 ; HIKITA, Masahiro1 ; UENO, Hiroaki1 ; MATSUO, Hisayoshi1 ; ISHIDA, Hidetoshi1 ; YANAGIHARA, Manabu1 ; UEDA, Tetsuzo1 ; TANAKA, Tsuyoshi1 ; UEDA, Daisuke1
[1] Semiconductor Device Research Center, Semi conductor Company, Matsushita Electric Industrial Company, Ltd, Kyoto 617-8520, Japan
Source

I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 12, pp 3393-3399, 7 p ; ref : 13 ref

CODEN
IETDAI
ISSN
0018-9383
Scientific domain
Electronics
Publisher
Institute of Electrical and Electronics Engineers, New York, NY
Publication country
United States
Document type
Article
Language
English
Author keyword
Conductivity modulation GaN Si substrate high breakdown voltage high power switching device hole injection low specific ON-state resistance normally off
Keyword (fr)
Commutateur Commutation Courant drain Densité électron Dispositif puissance Haute tension Hétérojonction Injection porteur charge Seuil tension Tension amorçage Tension de grille Transistor puissance Trou
Keyword (en)
Selector switch Switching Drain current Electron density Power device High voltage Heterojunction Charge carrier injection Voltage threshold Breakdown voltage Gate voltage Power transistor Hole
Keyword (es)
Conmutador Conmutación Corriente dren Densidad electrón Dispositivo potencia Alta tensión Heterounión Inyección portador carga Umbral tensión Voltaje perforación Voltaje de rejilla Transistor potencia Hoyo
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F05 Other multijunction devices. Power transistors. Thyristors

Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D05 Electrical engineering. Electrical power engineering / 001D05H Power electronics, power supplies

Discipline
Electrical engineering. Electroenergetics Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19876001

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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