Temperature and well number dependence of exciton localization in InGaN/GaN quantum wells
- Author
- PECHARROMAN-GALLEGO, R1
[1] Centro Láser-U.P.M., Universidad Politécnica de Madrid, Edificio Tecnológico 'La Arboleda', Carretera de Valencia km 7.300, 28031 Madrid, Spain - Source
Semiconductor science and technology. 2007, Vol 22, Num 12, pp 1276-1281, 6 p ; ref : 27 ref
- CODEN
- SSTEET
- ISSN
- 0268-1242
- Scientific domain
- Electronics; Optics; Condensed state physics
- Publisher
- Institute of Physics, Bristol
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Exciton localisé Facteur de Huang Rhys Fluctuation Méthode fonction Green Nitrure d'indium Nitrure de gallium Photoluminescence Puits quantique GaN InGaN
- Keyword (en)
- Localized exciton Huang Rhys factor Fluctuations Green's function methods Indium nitride Gallium nitride Photoluminescence Quantum wells
- Keyword (es)
- Excitón localizado Factor Huang Rhys Indio nitruro Galio nitruro
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H67 Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 001B70H67D Quantum wells
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19913200
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1088/0268-1242/22/12/006 
https://dx.doi.org/10.1088/0268-1242/22/12/006
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