Simulation and fabrication of high voltage AlGaN/GaN based Schottky diodes with field plate edge termination
- Author
- REMASHAN, K1 ; HUANG, Wen-Pin1 ; CHYI, Jen-Inn1
[1] Department of Electrical Engineering, National Central University, JhoungLi 32001, Taiwan, Province of China - Source
Microelectronic engineering. 2007, Vol 84, Num 12, pp 2907-2915, 9 p ; ref : 39 ref
- CODEN
- MIENEF
- ISSN
- 0167-9317
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- AlGaN/GaN Fabrication Schottky diode Simulation
- Keyword (fr)
- Diode barrière Schottky Diélectrique Gaz électron 2 dimensions Haute tension Simulateur Tension amorçage
- Keyword (en)
- Schottky barrier diode Dielectric materials Two-dimensional electron gas High voltage Simulator Breakdown voltage
- Keyword (es)
- Diodo barrera Schottky Dieléctrico Alta tensión Simulador Voltaje perforación
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F03 Diodes
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19916674
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.mee.2007.03.006 
https://dx.doi.org/10.1016/j.mee.2007.03.006
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