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Solution-Processed Organic Field-Effect Transistors and Unipolar Inverters Using Self-Assembled Interface Dipoles on Gate Dielectrics

Author
CHENG HUANG1 ; KATZ, Howard E1 ; WEST, James E2
[1] Department of Materials Science and Engineering, G. W. C. Whiting School of Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
[2] Department of Electrical and Computer Engineering, G. W. C. Whiting School of Engineering, Johns Hopkins University, Baltimore, Maryland 21218, United States
Source

Langmuir. 2007, Vol 23, Num 26, pp 13223-13231, 9 p ; ref : 20 ref

CODEN
LANGD5
ISSN
0743-7463
Scientific domain
Biochemistry, molecular biology, biophysics; General chemistry, physical chemistry; Nanotechnologies, nanostructures, nanoobjects; Polymers, paint and wood industries
Publisher
American Chemical Society, Washington, DC
Publication country
United States
Document type
Article
Language
English
Keyword (fr)
Autoassemblage Champ électrique Couche monomoléculaire Dipôle Déplétion Film Groupe fonctionnel Interface Mobilité Substrat
Keyword (en)
Self assembly Electric field Monolayer Dipole Depletion Film Functional group Interface Mobility Substrate
Keyword (es)
Autoensamble Campo eléctrico Capa monomolecular Dipolo Depleción Película Grupo funcional Interfase Movilidad Substrato
Classification
Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01I Surface physical chemistry

Pascal
001 Exact sciences and technology / 001C Chemistry / 001C01 General and physical chemistry / 001C01J Colloidal state and disperse state

Discipline
General chemistry and physical chemistry
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19924611

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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