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Recalling the origins of DLTS

Author
LANG, David V1 2
[1] Columbia University, New York, NY 10027, United States
[2] Sandia National Laboratories, Albuquerque, NM 87185, United States
Conference title
Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007
Conference name
ICDS-24 International Conference on Defects in Semiconductors (24 ; Albuquerque, NM 2007-07-22)
Author (monograph)
ESTREICHER, Stefan K (Editor)1 ; HOLTZ, Mark W (Editor)1 ; SEAGER, Carleton H (Editor)2 ; WRIGHT, Alan F (Editor)2
[1] Physics Department, Texas Tech University, Mail Stop 1051, Lubbock, TX 79409, United States
[2] Sandia National Laboratories, United States
Source

Physica. B, Condensed matter. 2007, Vol 401-02, pp 7-9, 3 p ; ref : 11 ref

ISSN
0921-4526
Scientific domain
Crystallography; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
DLTS Defects in semiconductors History of science Transient capacitance
Keyword (fr)
Appareillage Aspect historique Capacité électrique DLTS Etat défaut Méthode étude Oxyde de zinc Phosphure de gallium Résonance magnétique nucléaire Semiconducteur ZnO
Keyword (en)
Instrumentation Historical aspects Capacitance DLTS Defect states Investigation method Zinc oxide Gallium phosphide Nuclear magnetic resonance Semiconductor materials
Keyword (es)
Método estudio Zinc óxido Galio fosfuro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19925005

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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