Strong compensation of n-type Ge via formation of donor-vacancy complexes
- Author
- COUTINHO, J1 ; JANKE, C2 ; CARVALHO, A2 ; TORRES, V. J. B1 ; ÖBERG, S3 ; JONES, R2 ; BRIDDON, P. R4
[1] Department of Physics and I3N, University of Aveiro, Campus Santiago, 3810-193 Aveiro, Portugal
[2] School of Physics, University of Exeter, Stocker Road, Exeter EX4 4QL, United Kingdom
[3] Department of Mathematics, Luled University of Technology, Luled 97187, Sweden
[4] School of Natural Sciences, University of Newcastle upon Tyne, Newcastle upon Tyne NE1 7RU, United Kingdom - Conference title
- Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007
- Conference name
- ICDS-24 International Conference on Defects in Semiconductors (24 ; Albuquerque, NM 2007-07-22)
- Author (monograph)
- ESTREICHER, Stefan K (Editor)1 ; HOLTZ, Mark W (Editor)1 ; SEAGER, Carleton H (Editor)2 ; WRIGHT, Alan F (Editor)2
[1] Physics Department, Texas Tech University, Mail Stop 1051, Lubbock, TX 79409, United States
[2] Sandia National Laboratories, United States - Source
Physica. B, Condensed matter. 2007, Vol 401-02, pp 179-183, 5 p ; ref : 25 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- 61.72.Bb; 61.72.Ji; 61.72.Tt; 61.80.Az Germanium; Dopants; Vacancies; Compensation
- Keyword (fr)
- Centre accepteur Centre donneur Compensation Diffusivité Défaut complexe Effet rayonnement Germanium Impureté Interstitiel Lacune Méthode fonctionnelle densité Niveau profond Semiconducteur Si
- Keyword (en)
- Acceptor center Donor center Compensation Diffusivity Complex defect Radiation effects Germanium Impurities Interstitials Vacancies Density functional method Deep level Semiconductor materials
- Keyword (es)
- Centro aceptor Centro dador Defecto complejo Nivel profundo
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70A Electron states / 001B70A55 Impurity and defect levels / 001B70A55C Elemental semiconductors
- Discipline
- Physics of condensed state : electronic structure, electrical, magnetic and optical properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19925044
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2007.08.141 
https://dx.doi.org/10.1016/j.physb.2007.08.141
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