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The apparent effect of sample surface damage on the dielectric parameters of GaAs

Author
ENGELBRECHT, J. A. A1 ; HASHE, N. G1 ; HILLIE, K. T2 ; CLAASSENS, C. H3
[1] Physics Department, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031, South Africa
[2] CSIR-NML Laboratory, P.O. Box 395, Pretoria 0001, South Africa
[3] Physics Department, University of the Free State, Bloemfontein 9300, South Africa
Conference title
Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007
Conference name
ICDS-24 International Conference on Defects in Semiconductors (24 ; Albuquerque, NM 2007-07-22)
Author (monograph)
ESTREICHER, Stefan K (Editor)1 ; HOLTZ, Mark W (Editor)1 ; SEAGER, Carleton H (Editor)2 ; WRIGHT, Alan F (Editor)2
[1] Physics Department, Texas Tech University, Mail Stop 1051, Lubbock, TX 79409, United States
[2] Sandia National Laboratories, United States
Source

Physica. B, Condensed matter. 2007, Vol 401-02, pp 238-241, 4 p ; ref : 23 ref

ISSN
0921-4526
Scientific domain
Crystallography; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Conference Paper
Language
English
Author keyword
Experiment Group III-V Surfaces
Keyword (fr)
Arséniure de gallium Effet surface Endommagement surface Morphologie surface Simulation ordinateur Spectre IR Spectre réflexion GaAs
Keyword (en)
Gallium arsenides Surface effect Surface damage Surface morphology Computerized simulation Infrared spectra Reflection spectrum
Keyword (es)
Efecto superficie Espectro reflexión
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70H Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation / 001B70H68 Optical properties of surfaces

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19925058

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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