Influence of seed/crystal interface shape on dislocation generation in Czochralski Si crystal growth
- Author
- TAISHI, Toshinori1 ; OHNO, Yutaka1 ; YONENAGA, Ichiro1 ; HOSHIKAWA, Keigo2
[1] Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
[2] Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan - Conference title
- Proceedings of the 24th International Conference on Defects in Semiconductors ICDS-24, Held in Albuquerque, NM, USA, 22-27 July 2007
- Conference name
- ICDS-24 International Conference on Defects in Semiconductors (24 ; Albuquerque, NM 2007-07-22)
- Author (monograph)
- ESTREICHER, Stefan K (Editor)1 ; HOLTZ, Mark W (Editor)1 ; SEAGER, Carleton H (Editor)2 ; WRIGHT, Alan F (Editor)2
[1] Physics Department, Texas Tech University, Mail Stop 1051, Lubbock, TX 79409, United States
[2] Sandia National Laboratories, United States - Source
Physica. B, Condensed matter. 2007, Vol 401-02, pp 560-563, 4 p ; ref : 13 ref
- ISSN
- 0921-4526
- Scientific domain
- Crystallography; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Author keyword
- Dislocation Heavy doping Interface between seed and crystal Silicon crystal
- Keyword (fr)
- Addition bore Addition germanium Codopage Contrainte cisaillement Contrainte thermique Croissance cristalline en phase fondue Dislocation Dopage Formation défaut Germanium Germe cristallin Interface plane Méthode Czochralski Silicium Si
- Keyword (en)
- Boron additions Germanium additions Codoping Shear stress Thermal stresses Crystal growth from melts Dislocations Doping Defect formation Germanium Crystal seeds Planar interface Czochralski method Silicon
- Keyword (es)
- Codrogado Tensión cizallamiento Doping Formación defecto Interfase plana
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A10 Methods of crystal growth; physics of crystal growth / 001B80A10F Growth from melts; zone melting and refining
- Discipline
- Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19925134
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.physb.2007.09.021 
https://dx.doi.org/10.1016/j.physb.2007.09.021
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