Motion of hydrogen ions in the proton memory
- Author
- GIRAULT, V1 ; DEVINE, R. A. B1
[1] France Telecom-CNET, BP 98, 38243 Meylan, France - Conference title
- Amorphous and crystalline insulating thin films II
- Conference name
- International Conference on Amorphous and Crystalline Insulating Thin Films (2 ; Hong Kong 1998-10-12)
- Author (monograph)
- WILSON, I. H (Editor)1 ; DEVINE, R. A. B (Editor)2
[1] Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong, China
[2] France Telecom, CNET, Meylan, France - Source
Journal of non-crystalline solids. 1999, Vol 254, pp 57-65 ; ref : 14 ref
- CODEN
- JNCSBJ
- ISSN
- 0022-3093
- Scientific domain
- Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Champ électrique Etude théorique Hydrogène ion Mouvement particule Mémoire non volatile Proton Transistor MOS
- Keyword (en)
- Electric field Theoretical study Hydrogen ion Particle motion Non volatile memory Proton MOS transistor
- Keyword (es)
- Campo eléctrico Estudio teórico Hidrógeno ión Movimiento partícula Memoria no volátil Protón Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 1992708
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/S0022-3093(99)00372-5 
https://dx.doi.org/10.1016/S0022-3093(99)00372-5
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