Monte-Carlo simulation of decananometric nMOSFETs : Multi-subband vs. 3D-electron gas with quantum corrections
- Author
- RIOLINO, I1 ; BRACCIOLI, M2 ; LUCCI, L1 ; PALESTRI, P1 ; ESSENI, D1 ; FIEGNA, C2 ; SELMI, L1
[1] DIEGM, University of Udine, via delle scienze 208, 33100, Udine, Italy
[2] ARCES-DEIS, Bologna, Italy - Conference title
- Papers selected from the 36th European Solid-State Device Research Conference - ESSDERC’06
- Conference name
- ESSDERC’06 : European Solid-State Device Research Conference (36 ; Montreux 2006-09)
- Author (monograph)
- IONESCU, Adrian M (Editor)1 ; LEBLEBICI, Yusuf (Editor)1
[1] Institute of Microelectronics and Microsystems, Ecole Polytechnique Fédérale de Lausanne - EPFL, Switzerland - Source
Solid-state electronics. 2007, Vol 51, Num 11-12, pp 1558-1564, 7 p ; ref : 23 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Courant drain Effet quantique Gaz électron Méthode Monte Carlo Simulateur Simulation numérique Sous bande Technologie NMOS Technologie silicium sur isolant Transistor MOSFET
- Keyword (en)
- Drain current Quantum effect Electron gas Monte Carlo method Simulator Numerical simulation Subband NMOS technology Silicon on insulator technology MOSFET
- Keyword (es)
- Corriente dren Efecto cuántico Gas electrón Método Monte Carlo Simulador Simulación numérica Subbanda Tecnología NMOS Tecnología silicio sobre aislante
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19947710
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2007.09.011 
https://dx.doi.org/10.1016/j.sse.2007.09.011
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