Spacer Removal Technique for Boosting Strain in n-Channel FinFETs With Silicon-Carbon Source and Drain Stressors
- Author
- LIOW, Tsung-Yang1 2 ; TAN, Kian-Ming1 ; LEE, Rinus T. P1 ; MING ZHU1 ; HOE, Keat-Mun2 ; SAMUDRA, Ganesh S1 ; BALASUBRAMANIAN, N2 ; YEO, Yee-Chia1
[1] Silicon Nano Device Laboratory (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260, Singapore
[2] Institute of Microelectronics, Agency for Science, Technology and Research (A*STAR), Singapore 117685, Singapore - Source
IEEE electron device letters. 2008, Vol 29, Num 1, pp 80-82, 3 p ; ref : 9 ref
- CODEN
- EDLEDZ
- ISSN
- 0741-3106
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- FinFET multiple-gate transistor (MuGFET) silicon-carbon spacerless strain stress
- Keyword (fr)
- Cale espacement Canal n Contrainte traction Diminution coût Evaluation performance Miniaturisation Technologie autoalignée Transistor MOSFET Transistor grille double Transistor multigrille
- Keyword (en)
- Spacer n channel Tensile stress Cost lowering Performance evaluation Miniaturization Self aligned technology MOSFET Dual gate transistor Multiple gate transistor
- Keyword (es)
- Calce espaciamiento Canal n Tensión traccíon Reducción costes Evaluación prestación Miniaturización Tecnología rejilla autoalineada Transistor de compuerta doble Transistor de rejilla múltiple
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19954376
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/LED.2007.910779 
https://dx.doi.org/10.1109/LED.2007.910779
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