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Simulation of picosecond domain time-of-flight experiments in a-Si:H

Author
MAASSEN, Jesse1 ; YELON, Arthur1 ; HAMEL, Louis-André2
[1] Department of Engineering Physics, École Polytechnique de Montréal C.P. 6079, Succursale centre-ville, Montreal, Quebec, H3C 3A7, Canada
[2] Department of Physics, Université de Montréal, C.P. 6128, Succursale centre-ville, Montreal, Quebec, H3C 3J7, Canada
Source

Journal of non-crystalline solids. 2007, Vol 353, Num 52-54, pp 4779-4782, 4 p ; ref : 10 ref

CODEN
JNCSBJ
ISSN
0022-3093
Scientific domain
Crystallography; Chemical industry parachemical industry; Metallurgy, welding; Condensed state physics
Publisher
Elsevier, Amsterdam
Publication country
Netherlands
Document type
Article
Language
English
Author keyword
72.20.Ee; 72.20.Jv; 72.80.Ng Amorphous semiconductors; Silicon; Monte-Carlo simulations
Keyword (fr)
Conductivité électrique Matériau amorphe hydrogéné Mobilité dérive Méthode Monte Carlo Méthode empirique Méthode temps vol Picoseconde Semiconducteur amorphe Silicium Vitesse dérive Loi Meyer Nedel a-Si:H
Keyword (en)
Electrical conductivity Amorphous hydrogenated material Drift mobility Monte Carlo methods Empirical method Time-of-flight method Picosecond Amorphous semiconductors Silicon Drift velocity
Keyword (es)
Movilidad deriva Método empírico Picosegundo
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70B Electronic transport in condensed matter / 001B70B80 Conductivity of specific materials / 001B70B80N Disordered solids

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
19972095

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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