Temperature dependent analytical model of sub-micron GaN MESFETs for microwave frequency applications
- Author
- KABRA, Sneha1 ; KAUR, Harsupreet1 ; HALDAR, Subhasis2 ; GUPTA, Mridula1 ; GUPTA, R. S1
[1] Semiconductor Device Research Laboratory, Department of Electronic Science, University of Delhi, South Campus, New Delhi 110 021, India
[2] Department of Physics, Motilal Nehru College, University of Delhi, South Campus, New Delhi 110 021, India - Source
Solid-state electronics. 2008, Vol 52, Num 1, pp 25-30, 6 p ; ref : 34 ref
- ISSN
- 0038-1101
- Scientific domain
- Electronics
- Publisher
- Elsevier Science, Oxford
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Author keyword
- GaN MESFET Transconductance Wide band gap semiconductors
- Keyword (fr)
- Composé binaire Courant fuite Courant grille Dépendance température Effet température Fréquence coupure Méthode analytique Nitrure de gallium Semiconducteur bande interdite large Seuil tension Transconductance Transistor effet champ barrière Schottky Ga N GaN
- Keyword (en)
- Binary compound Leakage current Gate current Temperature dependence Temperature effect Cut off frequency Analytical method Gallium nitride Wide band gap semiconductors Voltage threshold Transconductance Metal semiconductor field effect transistor
- Keyword (es)
- Compuesto binario Corriente escape Corriente rejilla Efecto temperatura Frecuencia corte Método analítico Galio nitruro Umbral tensión Transconductancia Transistor efecto campo barrera Schottky
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 19987798
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.sse.2007.06.010 
https://dx.doi.org/10.1016/j.sse.2007.06.010
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