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SnO2, ZnO and related polycrystalline compound semiconductors : An overview and review on the voltage-dependent resistance (non-ohmic) feature

Author
BUENO, Paulo R1 ; VARELA, José A1 ; LONGO, Elson1
[1] Instituto de Quimica, Universidade Estadual Paulista, P.O. Box 355, 14801-907 Araraquara, SP, Brazil
Source

Journal of the European Ceramic Society. 2008, Vol 28, Num 3, pp 505-529, 25 p ; ref : 164 ref

ISSN
0955-2219
Scientific domain
Chemical industry parachemical industry
Publisher
Elsevier, Oxford
Publication country
United Kingdom
Document type
Article
Language
English
Author keyword
SnO2 Varistors ZnO
Keyword (fr)
Article synthèse Céramique Dépendance tension Endommagement Etude comparative Evaluation performance Joint grain Microstructure Oxyde d'étain Oxyde de zinc Perovskites Polycristal Propriété électronique Résistance électrique Varistance O Sn O Zn SnO2 ZnO
Keyword (en)
Review Ceramic materials Voltage dependence Damaging Comparative study Performance evaluation Grain boundary Microstructure Tin oxide Zinc oxide Perovskite type compound Polycrystal Electronic properties Resistor Varistance
Keyword (es)
Artículo síntesis Cerámica Deterioración Estudio comparativo Evaluación prestación Limite grano Microestructura Estaño óxido Zinc óxido Perovskitas Policristal Propiedad electrónica Resistencia eléctrica(componente) Varistancia
Classification
Pascal
001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03D Electronic equipment and fabrication. Passive components, printed wiring boards, connectics

Discipline
Electronics
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20005571

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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