A positron annihilation study on the defect properties of doped diamond films
- Author
- HU, X. J1 ; YE, J. S2 ; LIU, H. J1 ; MARIAZZI, S3 ; BRUSA, R. S3
[1] College of Chemical Engineering and Material Science, Zhejiang University of Technology, Hangzhou 310014, China
[2] Hangzhou Iron and Steel Group Corporation, Hangzhou 310022, China
[3] Dipartimento di Fisica, Università di Trento, 38050 Povo, TN, Italy - Source
Thin solid films. 2008, Vol 516, Num 8, pp 1699-1702, 4 p ; ref : 19 ref
- CODEN
- THSFAP
- ISSN
- 0040-6090
- Scientific domain
- Crystallography; Electronics; Metallurgy, welding; Condensed state physics
- Publisher
- Elsevier Science, Lausanne
- Publication country
- Switzerland
- Document type
- Article
- Language
- English
- Author keyword
- 07.35.+k; 78.74.+p; 71.60.+z Diamond films; Defect; Positron annihilation spectroscopy; Boron doping; Sulfur doping
- Keyword (fr)
- Addition bore Addition soufre Annihilation positon Couche mince Diamant synthétique Effet concentration Elargissement Doppler Lacune Matériau dopé Mécanisme croissance 6855J 8105U
- Keyword (en)
- Boron additions Sulfur additions Positron annihilation Thin films Synthetic diamond Quantity ratio Doppler broadening Vacancies Doped materials Growth mechanism
- Keyword (es)
- Diamante sintético Mecanismo crecimiento
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B60 Condensed matter: structure, mechanical and thermal properties / 001B60H Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties) / 001B60H55 Thin film structure and morphology / 001B60H55J Structure and morphology; thickness
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A05 Specific materials / 001B80A05T Fullerenes and related materials; diamonds, graphite
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15A Theory and models of film growth
- Discipline
- Physics and materials science Physics of condensed state : structure, mechanical and thermal properties
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20118335
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.tsf.2007.05.016 
https://dx.doi.org/10.1016/j.tsf.2007.05.016
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