Computational Study on the Performance of Multiple-Gate Nanowire Schottky-Barrier MOSFETs
- Author
- SHIN, Mincheol1
[1] School of Engineering, Information and Communications University, Daejeon 305-732, Korea, Republic of - Source
I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 737-742, 6 p ; ref : 16 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Multiple gates Schottky- barrier (SB) MOSFETs nanowire transistors semiconductor device modeling
- Keyword (fr)
- Autocohérence Dispositif planaire Dispositif semiconducteur Effet dimensionnel Effet quantique Equation Poisson Equation transport Evaluation performance Fonction Green Matériau dopé Modélisation Nanofil Régime hors équilibre Transistor MOSFET Transistor effet champ barrière Schottky Transport balistique
- Keyword (en)
- Self consistency Planar device Semiconductor device Size effect Quantum effect Poisson equation Transport equation Performance evaluation Green function Doped materials Modeling Nanowires Non equilibrium conditions MOSFET Metal semiconductor field effect transistor Ballistic transport
- Keyword (es)
- Autocoherencia Dispositivo planar Dispositivo semiconductor Efecto dimensional Efecto cuántico Ecuación Poisson Ecuación transporte Evaluación prestación Función Green Modelización Régimen fuera equilibrio Transistor efecto campo barrera Schottky Transporte balístico
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20118980
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2008.916149 
https://dx.doi.org/10.1109/TED.2008.916149
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