Strained n-MOSFET With Embedded Source/Drain Stressors and Strain-Transfer Structure (STS) for Enhanced Transistor Performance
- Author
- ANG, Kah-Wee1 ; JIANQIANG LIN1 ; TUNG, Chih-Hang2 ; BALASUBRAMANIAN, Narayanan2 ; SAMUDRA, Ganesh S1 ; YEO, Yee-Chia1
[1] Silicon Nano Device Laboratory (SNDL), Department of Electrical and Computer Engineering, National University of Singapore, Singpore 119260, Singapore
[2] Institute of Microelectronics, Singpore 117685, Singapore - Source
I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 3, pp 850-857, 8 p ; ref : 21 ref
- CODEN
- IETDAI
- ISSN
- 0018-9383
- Scientific domain
- Electronics
- Publisher
- Institute of Electrical and Electronics Engineers, New York, NY
- Publication country
- United States
- Document type
- Article
- Language
- English
- Author keyword
- Lateral tensile strain n-MOSFET silicon-carbon (Si:C) strain-transfer structure (STS)
- Keyword (fr)
- Alliage semiconducteur Désadaptation Evaluation performance Hétérostructure Méthode élément fini Optimisation Simulation numérique Technologie NMOS Transistor MOS Transistor MOSFET
- Keyword (en)
- Semiconductor alloys Mismatching Performance evaluation Heterostructures Finite element method Optimization Numerical simulation NMOS technology MOS transistor MOSFET
- Keyword (es)
- Desadaptación Evaluación prestación Método elemento finito Optimización Simulación numérica Tecnología NMOS Transistor MOS
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20118996
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1109/TED.2007.915053 
https://dx.doi.org/10.1109/TED.2007.915053
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