Strain oriented microstructural change during the fabrication of free-standing PbSe micro-rods
- Author
- MUKHERJEE, S1 ; JAIN, S1 ; ZHAO, F1 ; KAR, J. P1 ; LI, D1 ; SHI, Z1
[1] School of Electrical and Computer Engineering, University of Oklahoma, Norman, OK 73019, United States - Source
Journal of materials science. Materials in electronics. 2008, Vol 19, Num 3, pp 237-240, 4 p ; ref : 11 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Article
- Language
- English
- Keyword (fr)
- Baryum Dispositif optoélectronique Gravure Microstructure Rayonnement IR moyen Séléniure de plomb Ba
- Keyword (en)
- Barium Optoelectronic device Engraving Microstructure Mid infrared radiation Lead selenides
- Keyword (es)
- Bario Dispositivo optoelectrónico Grabado Microestructura Radiación infrarroja media
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F15 Optoelectronic devices
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20125232
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-007-9261-1 
https://dx.doi.org/10.1007/s10854-007-9261-1
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