AlGaN/GaN MIS-HEMTs with fT of 194 GHz at 16 K
- Author
- ENDOH, A1 ; WATANABE, I1 ; YAMASHITA, Y2 ; MIMURA, T1 ; MATSUI, T1
[1] National Institute of Information and Communications Technology, 4-2-1 Nukui-kitamachi, Koganei, Tokyo 184-8795, Japan
[2] Fujitsu Laboratories Ltd, 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0197, Japan - Source
Electronics Letters. 2008, Vol 44, Num 4, pp 319-320, 2 p ; ref : 6 ref
- CODEN
- ELLEAK
- ISSN
- 0013-5194
- Scientific domain
- Electronics; Optics; Telecommunications
- Publisher
- Institution of Electrical Engineers, London
- Publication country
- United Kingdom
- Document type
- Article
- Language
- English
- Keyword (fr)
- Caractéristique électrique Composé binaire Composé ternaire Courant continu Fréquence coupure Haute fréquence Nitrure d'aluminium Nitrure de gallium Résistance parasite Transistor MIS Transistor mobilité électron élevée AlGaN GaN
- Keyword (en)
- Electrical characteristic Binary compound Ternary compound Direct current Cut off frequency High frequency Aluminium nitride Gallium nitride Parasitic resistance MIS transistor High electron mobility transistor
- Keyword (es)
- Característica eléctrica Compuesto binario Compuesto ternario Corriente contínua Frecuencia corte Alta frecuencia Aluminio nitruro Galio nitruro Resistencia parásita Transistor MIS Transistor movibilidad elevada electrones
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20128805
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
Install on your browser
"O:13:\"PanistOpenUrl\":36:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000idc\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:9:\"\u0000*\u0000jtitle\";s:19:\"Electronics Letters\";s:9:\"\u0000*\u0000stitle\";s:14:\"Electron. Lett\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"44\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"319\";s:8:\"\u0000*\u0000epage\";s:3:\"320\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-5194\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ENDOH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"WATANABE, I\";i:1;s:12:\"YAMASHITA, Y\";i:2;s:9:\"MIMURA, T\";i:3;s:9:\"MATSUI, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"ELLEAK\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"2\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Panist access
"O:12:\"IstexOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:9:\"\u0000*\u0000jtitle\";s:19:\"Electronics Letters\";s:9:\"\u0000*\u0000stitle\";s:14:\"Electron. Lett\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"44\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"319\";s:8:\"\u0000*\u0000epage\";s:3:\"320\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-5194\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ENDOH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"WATANABE, I\";i:1;s:12:\"YAMASHITA, Y\";i:2;s:9:\"MIMURA, T\";i:3;s:9:\"MATSUI, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"ELLEAK\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"2\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Istex access
"O:16:\"EuropePMCOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:9:\"\u0000*\u0000jtitle\";s:19:\"Electronics Letters\";s:9:\"\u0000*\u0000stitle\";s:14:\"Electron. Lett\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"44\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"319\";s:8:\"\u0000*\u0000epage\";s:3:\"320\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-5194\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ENDOH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"WATANABE, I\";i:1;s:12:\"YAMASHITA, Y\";i:2;s:9:\"MIMURA, T\";i:3;s:9:\"MATSUI, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"ELLEAK\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"2\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Europe PubMed Central access
"O:11:\"BaseOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:9:\"\u0000*\u0000jtitle\";s:19:\"Electronics Letters\";s:9:\"\u0000*\u0000stitle\";s:14:\"Electron. Lett\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"44\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"319\";s:8:\"\u0000*\u0000epage\";s:3:\"320\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-5194\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ENDOH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"WATANABE, I\";i:1;s:12:\"YAMASHITA, Y\";i:2;s:9:\"MIMURA, T\";i:3;s:9:\"MATSUI, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"ELLEAK\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"2\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
Base Search access
"O:12:\"ArXivOpenUrl\":35:{s:10:\"\u0000*\u0000openUrl\";N;s:6:\"\u0000*\u0000fmt\";s:7:\"journal\";s:6:\"\u0000*\u0000doi\";s:0:\"\";s:6:\"\u0000*\u0000pii\";s:0:\"\";s:7:\"\u0000*\u0000pmid\";s:0:\"\";s:9:\"\u0000*\u0000atitle\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:9:\"\u0000*\u0000jtitle\";s:19:\"Electronics Letters\";s:9:\"\u0000*\u0000stitle\";s:14:\"Electron. Lett\";s:7:\"\u0000*\u0000date\";s:4:\"2008\";s:9:\"\u0000*\u0000volume\";s:2:\"44\";s:8:\"\u0000*\u0000issue\";s:1:\"4\";s:8:\"\u0000*\u0000spage\";s:3:\"319\";s:8:\"\u0000*\u0000epage\";s:3:\"320\";s:8:\"\u0000*\u0000pages\";s:0:\"\";s:7:\"\u0000*\u0000issn\";s:9:\"0013-5194\";s:8:\"\u0000*\u0000eissn\";s:0:\"\";s:9:\"\u0000*\u0000aulast\";s:5:\"ENDOH\";s:10:\"\u0000*\u0000aufirst\";s:1:\"A\";s:9:\"\u0000*\u0000auinit\";s:0:\"\";s:10:\"\u0000*\u0000auinitm\";s:0:\"\";s:5:\"\u0000*\u0000au\";a:4:{i:0;s:11:\"WATANABE, I\";i:1;s:12:\"YAMASHITA, Y\";i:2;s:9:\"MIMURA, T\";i:3;s:9:\"MATSUI, T\";}s:9:\"\u0000*\u0000aucorp\";s:0:\"\";s:7:\"\u0000*\u0000isbn\";s:0:\"\";s:8:\"\u0000*\u0000coden\";s:6:\"ELLEAK\";s:8:\"\u0000*\u0000genre\";s:7:\"article\";s:7:\"\u0000*\u0000part\";s:0:\"\";s:9:\"\u0000*\u0000btitle\";s:0:\"\";s:8:\"\u0000*\u0000title\";s:46:\"AlGaN\/GaN MIS-HEMTs with fT of 194 GHz at 16 K\";s:8:\"\u0000*\u0000place\";s:6:\"London\";s:6:\"\u0000*\u0000pub\";s:35:\"Institution of Electrical Engineers\";s:10:\"\u0000*\u0000edition\";s:0:\"\";s:9:\"\u0000*\u0000tpages\";s:1:\"2\";s:9:\"\u0000*\u0000series\";s:0:\"\";s:8:\"\u0000*\u0000proxy\";s:30:\"http:\/\/proxyout.inist.fr:8080\/\";s:12:\"\u0000*\u0000integrite\";b:1;}"
arXiv access
