Modified thermoelectric figure of merit estimated from enhanced mobility of [100] oriented beta-FeSi2 thin film
- Author
- KAKEMOTO, Hirofumi1 ; HIGUCHI, Tohru2 ; SHIBATA, Hajime3 ; WADA, Satoshi1 ; TSURUMI, Takaaki1
[1] Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-8552, Japan
[2] Tokyo University of Science, 1-3 Kagurazaka, Shinjuku, Tokyo 162-8601, Japan
[3] National Institute of Advanced Industrial Science and Technology, Tsukuba Central 2, Tsukuba 305-8568, Japan - Conference name
- International Conference on Materials for Microelectronics and Nanoengineering (MFMN2006) (MFMN2006) (6 )
- Source
Journal of materials science. Materials in electronics. 2008, Vol 19, Num 4, pp 311-314, 4 p ; ref : 12 ref
- ISSN
- 0957-4522
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Springer, Norwell, MA
- Publication country
- United States
- Document type
- Conference Paper
- Language
- English
- Keyword (fr)
- Couche mince Diffraction RX Direction cristallographique Effet thermoélectrique Epitaxie jet moléculaire Fabrication microélectronique Facteur mérite Fer Microscopie électronique balayage Silicium Siliciure de fer Structure surface Sulfure de fer Température ambiante 0779 8115H Fe FeS2 FeSi2 Si
- Keyword (en)
- Thin film X ray diffraction Crystallographic direction Thermoelectric effect Molecular beam epitaxy Microelectronic fabrication Figure of merit Iron Scanning electron microscopy Silicon Iron silicide Surface structure Iron sulfide Room temperature
- Keyword (es)
- Capa fina Difracción RX Dirección cristalográfica Efecto termoeléctrico Fabricación microeléctrica Factor mérito Hierro Microscopía electrónica barrido Silicio Hierro siliciuro Estructura superficie Hierro sulfuro Temperatura ambiente
- Classification
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B00 General / 001B00G Instruments, apparatus, components and techniques common to several branches of physics and astronomy / 001B00G79 Scanning probe microscopes, components and techniques
- Pascal
- 001 Exact sciences and technology / 001B Physics / 001B80 Cross-disciplinary physics: materials science; rheology / 001B80A Materials science / 001B80A15 Methods of deposition of films and coatings; film growth and epitaxy / 001B80A15H Molecular, atomic, ion, and chemical beam epitaxy
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics Metrology Physics and materials science
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20139276
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1007/s10854-007-9335-0 
https://dx.doi.org/10.1007/s10854-007-9335-0
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