Ambipolar transport in transparent and flexible all-organic heterojunction field effect transistors at ambient conditions
- Author
- COSSEDDU, P1 2 ; BONFIGLIO, A1 2 ; SALZMANN, I3 ; RABE, J. P3 ; KOCH, N3
[1] INFM-University of Cagliari, Department of Electric and Electronic Engineering, Piazza d'Armi, 09123 Cagliari, Italy
[2] CNR-INFM-S3 nanoStructures and bioSystems at Surfaces, Via Campi 213IA, 41100 Modena, Italy
[3] Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, 12489 Berlin, Germany - Source
Organic electronics. 2008, Vol 9, Num 2, pp 191-197, 7 p ; ref : 44 ref
- ISSN
- 1566-1199
- Scientific domain
- Electronics; Condensed state physics
- Publisher
- Elsevier, Amsterdam
- Publication country
- Netherlands
- Document type
- Article
- Language
- English
- Author keyword
- 68.55.am; 85.30.Tv; 85.30.Pq Organic field effect transistors; Ambipolar transport; Fullerene; Pentacene; Flexible electronics
- Keyword (fr)
- Couche double Couche tampon Diffraction RX Diffusion ambipolaire Diminution coût Electronique organique Fabrication microélectronique Flexibilité Fullerènes Hétérojonction Injection électron Lithographie Microscopie force atomique Pentacène Propriété matériau Propriété transport Robustesse Semiconducteur organique Semiconducteur type n Semiconducteur type p Structure flexible Transistor effet champ hétérojonction Transistor effet champ C60
- Keyword (en)
- Double layers Buffer layer X ray diffraction Ambipolar diffusion Cost lowering Organic electronics Microelectronic fabrication Flexibility Fullerenes Heterojunction Electron injection Lithography Atomic force microscopy Pentacene Properties of materials Transport properties Robustness Organic semiconductors n type semiconductor p type semiconductor Flexible structure Heterojunction field effect transistor Field effect transistor
- Keyword (es)
- Capa tampón Difracción RX Difusión ambipolar Reducción costes Electrónica orgánica Fabricación microeléctrica Flexibilidad Heterounión Inyección electrón Litografía Microscopía fuerza atómica Pentaceno Propiedad material Propiedad transporte Robustez Semiconductor tipo n Semiconductor tipo p Estructura flexible Transistor efecto campo heterounión Transistor efecto campo
- Classification
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03C Materials
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F02 Compound structure devices
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F04 Transistors
- Pascal
- 001 Exact sciences and technology / 001D Applied sciences / 001D03 Electronics / 001D03F Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices / 001D03F17 Microelectronic fabrication (materials and surfaces technology)
- Discipline
- Electronics
- Origin
- Inist-CNRS
- Database
- PASCAL
- INIST identifier
- 20140036
Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS
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DOI
10.1016/j.orgel.2007.10.011 
https://dx.doi.org/10.1016/j.orgel.2007.10.011
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