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Temperature-dependent behavior of Ti/p-InP/ZnAu Schottky barrier diodes

Author
ASUBAY, Sezai1 ; GÜLLÜ, Omer2 ; ABAY, Bahattin2 ; TÜRÜT, Abdulmecit2 ; YILMAZ, Ali1
[1] University of Dicle, Faculty of Science & Art, Department of Physics, Diyarbakir, Turkey
[2] Atatiirk University, Faculty of Sciences and Arts, Department of Physics, 25240 Erzurum, Turkey
Source

Semiconductor science and technology. 2008, Vol 23, Num 3 ; 035006.1-035006.6 ; ref : 52 ref

CODEN
SSTEET
ISSN
0268-1242
Scientific domain
Electronics; Optics; Condensed state physics
Publisher
Institute of Physics, Bristol
Publication country
United Kingdom
Document type
Article
Language
English
Keyword (fr)
Barrière Schottky Caractéristique courant tension Contact métal semiconducteur Effet température Emission thermoionique Hauteur barrière Loi Gauss Phosphure d'indium Titane InP
Keyword (en)
Schottky barriers IV characteristic Metal-semiconductor contacts Temperature effects Thermionic emission Barrier height Gaussian distribution Indium phosphide Titanium
Keyword (es)
Indio fosfuro
Classification
Pascal
001 Exact sciences and technology / 001B Physics / 001B70 Condensed matter: electronic structure, electrical, magnetic, and optical properties / 001B70C Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures / 001B70C30 Surface double layers, schottky barriers, and work functions

Discipline
Physics of condensed state : electronic structure, electrical, magnetic and optical properties
Origin
Inist-CNRS
Database
PASCAL
INIST identifier
20162199

Sauf mention contraire ci-dessus, le contenu de cette notice bibliographique peut être utilisé dans le cadre d’une licence CC BY 4.0 Inist-CNRS / Unless otherwise stated above, the content of this bibliographic record may be used under a CC BY 4.0 licence by Inist-CNRS / A menos que se haya señalado antes, el contenido de este registro bibliográfico puede ser utilizado al amparo de una licencia CC BY 4.0 Inist-CNRS

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